Semiconductor processing chamber multistage mixing apparatus

ABSTRACT

Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.15/897,860, filed Feb. 15, 2018, and which is hereby incorporated byreference in its entirety for all purposes.

TECHNICAL FIELD

The present technology relates to semiconductor systems, processes, andequipment. More specifically, the present technology relates to systemsand methods for delivering precursors within a system and chamber.

BACKGROUND

Integrated circuits are made possible by processes which produceintricately patterned material layers on substrate surfaces. Producingpatterned material on a substrate requires controlled methods forremoval of exposed material. Chemical etching is used for a variety ofpurposes including transferring a pattern in photoresist into underlyinglayers, thinning layers, or thinning lateral dimensions of featuresalready present on the surface. Often it is desirable to have an etchprocess that etches one material faster than another facilitating, forexample, a pattern transfer process or individual material removal. Suchan etch process is said to be selective to the first material. As aresult of the diversity of materials, circuits, and processes, etchprocesses have been developed with a selectivity towards a variety ofmaterials.

Etch processes may be termed wet or dry based on the materials used inthe process. A wet HF etch preferentially removes silicon oxide overother dielectrics and materials. However, wet processes may havedifficulty penetrating some constrained trenches and also may sometimesdeform the remaining material. Dry etch processes may penetrate intointricate features and trenches, but may not provide acceptabletop-to-bottom profiles. As device sizes continue to shrink innext-generation devices, the ways in which systems deliver precursorsinto and through a chamber may have an increasing impact. As uniformityof processing conditions continues to increase in importance, chamberdesigns and system set-ups may have an important role in the quality ofdevices produced.

Thus, there is a need for improved systems and methods that can be usedto produce high quality devices and structures. These and other needsare addressed by the present technology.

SUMMARY

Exemplary semiconductor processing systems may include a processingchamber, and may include a remote plasma unit coupled with theprocessing chamber. Exemplary systems may also include a mixing manifoldcoupled between the remote plasma unit and the processing chamber. Themixing manifold may be characterized by a first end and a second endopposite the first end, and may be coupled with the processing chamberat the second end. The mixing manifold may define a central channelthrough the mixing manifold, and may define a port along an exterior ofthe mixing manifold. The port may be fluidly coupled with a first trenchdefined within the first end of the mixing manifold. The first trenchmay be characterized by an inner radius at a first inner sidewall and anouter radius, and the first trench may provide fluid access to thecentral channel through the first inner sidewall.

In some embodiments, the mixing manifold may also include a secondtrench defined within the first end of the mixing manifold. The secondtrench may be located radially outward from the first trench, and theport may be fluidly coupled with the second trench. The second trenchmay be characterized by an inner radius at a second inner sidewall. Thesecond inner sidewall may also define the outer radius of the firsttrench. The second inner sidewall may define a plurality of aperturesdefined through the second inner sidewall and providing fluid access tothe first trench. The first inner sidewall may define a plurality ofapertures defined through the first inner sidewall and providing fluidaccess to the central channel. Each aperture of the plurality ofapertures defined through the second inner sidewall may be radiallyoffset from each aperture of the plurality of apertures defined throughthe first inner sidewall.

The systems may also include an isolator coupled between the mixingmanifold and the remote plasma unit. The isolator may be or include aceramic. The systems may also include an adapter coupled between themixing manifold and the remote plasma unit. The adapter may becharacterized by a first end and a second end opposite the first end.The adapter may define a central channel extending partially through theadapter. The adapter may define a port through an exterior of theadapter. The port may be fluidly coupled with a mixing channel definedwithin the adapter. The mixing channel may be fluidly coupled with thecentral channel. The adapter may include an oxide on interior surfacesof the adapter. The systems may also include a spacer positioned betweenthe adapter and the mixing manifold.

The present technology may also encompass semiconductor processingsystems. The systems may include a remote plasma unit. The systems mayinclude a processing chamber that may include a gasbox defining acentral channel. The systems may include a blocker plate coupled withthe gasbox. The blocker plate may define a plurality of aperturesthrough the blocker plate. The systems may include a faceplate coupledwith the blocker plate at a first surface of the faceplate. The systemsmay also include a mixing manifold coupled with the gasbox. The mixingmanifold may be characterized by a first end and a second end oppositethe first end. The mixing manifold may be coupled with the processingchamber at the second end. The mixing manifold may define a centralchannel through the mixing manifold that is fluidly coupled with thecentral channel defined through the gasbox. The mixing manifold maydefine a port along an exterior of the mixing manifold. The port may befluidly coupled with a first trench defined within the first end of themixing manifold. The first trench may be characterized by an innerradius at a first inner sidewall and an outer radius. The first trenchmay provide fluid access to the central channel through the first innersidewall.

In some embodiments, the systems may also include a heater coupledexternally to the gasbox about a mixing manifold coupled to the gasbox.The mixing manifold may be or include nickel. The systems may include anadapter coupled with the remote plasma unit. The adapter may becharacterized by a first end and a second end opposite the first end.The adapter may define a central channel extending partially through theadapter from the first end to a midpoint of the adapter. The adapter maydefine a plurality of access channels from the midpoint of the adapterextending towards the second end of the adapter. The plurality of accesschannels may be distributed radially about a central axis through theadapter. The adapter may define a port through an exterior of theadapter. The port may be fluidly coupled with a mixing channel definedwithin the adapter. The mixing channel may extend through a centralportion of the adapter towards the second end of the adapter. Theadapter may define a port through an exterior of the adapter. The portmay be fluidly coupled with a mixing channel defined within the adapter.The mixing channel may extend through a central portion of the adaptertowards the midpoint of the adapter to fluidly access the centralchannel defined by the adapter.

The present technology may also encompass methods of deliveringprecursors through a semiconductor processing system. The methods mayinclude forming a plasma of a fluorine-containing precursor in a remoteplasma unit. The methods may include flowing plasma effluents of thefluorine-containing precursor into an adapter. The methods may includeflowing a hydrogen-containing precursor into the adapter. The methodsmay include mixing the hydrogen-containing precursor with the plasmaeffluents to produce a first mixture. The methods may include flowingthe first mixture to a mixing manifold. The methods may include flowinga third precursor into the mixing manifold. The methods may includemixing the third precursor with the first mixture to produce a secondmixture. The methods may also include flowing the second mixture into aprocessing chamber.

Such technology may provide numerous benefits over conventional systemsand techniques. For example, the present technology may utilize alimited number of components compared to conventional designs.Additionally, by utilizing components that produce etchant speciesoutside of the chamber, mixing and delivery to a substrate may beprovided more uniformly over traditional systems. These and otherembodiments, along with many of their advantages and features, aredescribed in more detail in conjunction with the below description andattached figures.

BRIEF DESCRIPTION OF THE DRAWINGS

A further understanding of the nature and advantages of the disclosedtechnology may be realized by reference to the remaining portions of thespecification and the drawings.

FIG. 1 shows a top plan view of an exemplary processing system accordingto some embodiments of the present technology.

FIG. 2 shows a schematic cross-sectional view of an exemplary processingchamber according to some embodiments of the present technology.

FIG. 3 shows a schematic partial bottom plan view of an isolatoraccording to some embodiments of the present technology.

FIG. 4 shows a schematic partial top plan view of an adapter accordingto some embodiments of the present technology.

FIG. 5 shows a schematic cross-sectional view of an adapter through lineA-A of FIG. 2 according to some embodiments of the present technology.

FIG. 6 shows a schematic perspective view of a mixing manifold accordingto some embodiments of the present technology.

FIG. 7 shows a schematic cross-sectional view of a mixing manifoldthrough line B-B of FIG. 6 according to some embodiments of the presenttechnology.

FIG. 8 shows a schematic cross-sectional view of a mixing manifoldthrough line C-C of FIG. 6 according to some embodiments of the presenttechnology.

FIG. 9 shows operations of a method of delivering precursors through aprocessing system according to some embodiments of the presenttechnology.

Several of the figures are included as schematics. It is to beunderstood that the figures are for illustrative purposes, and are notto be considered of scale unless specifically stated to be of scale.Additionally, as schematics, the figures are provided to aidcomprehension and may not include all aspects or information compared torealistic representations, and may include exaggerated material forillustrative purposes.

In the appended figures, similar components and/or features may have thesame reference label. Further, various components of the same type maybe distinguished by following the reference label by a letter thatdistinguishes among the similar components. If only the first referencelabel is used in the specification, the description is applicable to anyone of the similar components having the same first reference labelirrespective of the letter.

DETAILED DESCRIPTION

The present technology includes semiconductor processing systems,chambers, and components for performing semiconductor fabricationoperations. Many dry etch operations performed during semiconductorfabrication may involve multiple precursors. When energized and combinedin various ways, these etchants may be delivered to a substrate toremove or modify aspects of a substrate. Traditional processing systemsmay provide precursors, such as for deposition or etching, in multipleways. One way of providing enhanced precursors is to provide all of theprecursors through a remote plasma unit before delivering the precursorsthrough a processing chamber and to a substrate, such as a wafer, forprocessing. An issue with this process, however, is that the differentprecursors may be reactive with different materials, which may causedamage to the remote plasma unit or components delivering theprecursors. For example, an enhanced fluorine-containing precursor mayreact with aluminum surfaces, but may not react with oxide surfaces. Anenhanced hydrogen-containing precursor may not react with an aluminumsurface within a remote plasma unit, but may react with and remove anoxide coating. Thus, if the two precursors are delivered through aremote plasma unit together, they may damage a coating or liner withinthe unit. Additionally, the power at which a plasma is ignited mayaffect the process being performed by the amount of dissociationproduced. For example, in some processes a high amount of dissociationfor a hydrogen-containing precursor may be beneficial, but a loweramount of dissociation for a fluorine-containing precursor may allow amore controlled etch.

Traditional processing may also deliver one precursor through a remoteplasma device for plasma processing, and may deliver a second precursordirectly into a chamber. An issue with this process, however, is thatmixing of the precursors may be difficult, may not provide adequatecontrol over etchant generation, and may not provide a uniform etchantat the wafer or substrate. This may cause processes to not be performeduniformly across a surface of a substrate, which may cause device issuesas patterning and formation continues.

The present technology may overcome these issues by utilizing componentsand systems configured to mix the precursors prior to delivering theminto the chamber, while only having one etchant precursor deliveredthrough a remote plasma unit, although multiple precursors can also beflowed through a remote plasma unit, such as carrier gases or otheretchant precursors. The particular bypass scheme may fully mix theprecursors prior to delivering them to a processing chamber, and mayprovide intermediate mixing as each precursor is added to the system.This may allow uniform processes to be performed while protecting aremote plasma unit. Chambers of the present technology may also includecomponent configurations that maximize thermal conductivity through thechamber, and increase ease of servicing by coupling the components inspecific ways.

Although the remaining disclosure will routinely identify specificetching processes utilizing the disclosed technology, it will be readilyunderstood that the systems and methods are equally applicable todeposition and cleaning processes as may occur in the describedchambers. Accordingly, the technology should not be considered to be solimited as for use with etching processes alone. The disclosure willdiscuss one possible system and chamber that can be used with thepresent technology to perform certain of the removal operations beforedescribing component aspects and variations to this system according toembodiments of the present technology.

FIG. 1 shows a top plan view of one embodiment of a processing system100 of deposition, etching, baking, and curing chambers according toembodiments. In the figure, a pair of front opening unified pods (FOUPs)102 supply substrates of a variety of sizes that are received by roboticarms 104 and placed into a low pressure holding area 106 before beingplaced into one of the substrate processing chambers 108 a-f, positionedin tandem sections 109 a-c. A second robotic arm 110 may be used totransport the substrate wafers from the holding area 106 to thesubstrate processing chambers 108 a-f and back. Each substrateprocessing chamber 108 a-f, can be outfitted to perform a number ofsubstrate processing operations including the dry etch processesdescribed herein in addition to cyclical layer deposition (CLD), atomiclayer deposition (ALD), chemical vapor deposition (CVD), physical vapordeposition (PVD), etch, pre-clean, degas, orientation, and othersubstrate processes.

The substrate processing chambers 108 a-f may include one or more systemcomponents for depositing, annealing, curing and/or etching a dielectricfilm on the substrate wafer. In one configuration, two pairs of theprocessing chambers, e.g., 108 c-d and 108 e-f, may be used to depositdielectric material on the substrate, and the third pair of processingchambers, e.g., 108 a-b, may be used to etch the deposited dielectric.In another configuration, all three pairs of chambers, e.g., 108 a-f,may be configured to etch a dielectric film on the substrate. Any one ormore of the processes described may be carried out in chamber(s)separated from the fabrication system shown in different embodiments. Itwill be appreciated that additional configurations of deposition,etching, annealing, and curing chambers for dielectric films arecontemplated by system 100.

FIG. 2 shows a schematic cross-sectional view of an exemplary processingsystem 200 according to embodiments of the present technology. System200 may include a processing chamber 205 and a remote plasma unit 210.The remote plasma unit 210 may be coupled with processing chamber 205with one or more components. The remote plasma unit 210 may be coupledwith one or more of an isolator 215, an adapter 220, a spacer 230, and amixing manifold 235. Mixing manifold 235 may be coupled with a top ofprocessing chamber 205, and may be coupled with an inlet to processingchamber 205.

Isolator 215 may be coupled with remote plasma unit 210 at a first end211, and may be coupled with adapter 220 at a second end 212 oppositefirst end 211. Through isolator 215 may be defined one or more channels.At first end 211 may be defined an opening or port to a channel 213.Channel 213 may be centrally defined within isolator 215, and may becharacterized by a first cross-sectional surface area in a directionnormal to a central axis through isolator 215, which may be in thedirection of flow from the remote plasma unit 210. A diameter of channel213 may be equal to or in common with an exit port from remote plasmaunit 210. Channel 213 may be characterized by a length from the firstend 211 to the second end 212. Channel 213 may extend through the entirelength of isolator 215, or a length less than the length from first end211 to second end 212. For example, channel 213 may extend less thanhalf of the length from the first end 211 to the second end 212, channel213 may extend halfway of the length from the first end 211 to thesecond end 212, channel 213 may extend more than half of the length fromthe first end 211 to the second end 212, or channel 213 may extend abouthalf of the length from the first end 211 to the second end 212 ofisolator 215.

Channel 213 may transition to smaller apertures 214 extending from abase of channel 213 defined within the isolator 215 through second end212. For example, one such smaller aperture 214 is illustrated in FIG.2, although it is to be understood that any number of apertures 214 maybe defined from channel 213 to second end 212 through isolator 215. Thesmaller apertures may be distributed about a central axis of isolator215 as will be discussed further below. Smaller apertures 214 may becharacterized by a diameter less than or about 50% of a diameter ofchannel 213, and may be characterized by a diameter less than or about40%, less than or about 30%, less than or about 20%, less than or about10%, less than or about 5%, or less of the diameter of channel 213.Isolator 215 may also define one or more trenches defined beneathisolator 215. The trenches may be or include one or more annularrecesses defined within isolator 215 to allow seating of an o-ring orelastomeric element, which may allow coupling with an adapter 220.

While other components of the processing system may be metal orthermally conductive materials, isolator 215 may be a less thermallyconductive material. In some embodiments, isolator 215 may be or includea ceramic, plastic, or other thermally insulating component configuredto provide a thermal break between the remote plasma unit 210 and thechamber 205. During operation, remote plasma unit 210 may be cooled oroperate at a lower temperature relative to chamber 205, while chamber205 may be heated or operate at a higher temperature relative to remoteplasma unit 210. Providing a ceramic or thermally insulating isolator215 may prevent or limit thermal, electrical, or other interferencebetween the components.

Adapter 220 may be coupled with second end 212 of isolator 215 inembodiments. Adapter 220 may be characterized by a first end 217 and asecond end 218 opposite the first end. Adapter 220 may define one ormore central channels through portions of adapter 220. For example, fromfirst end 217, central channel 219, or a first central channel, mayextend at least partially through adapter 220 towards second end 218,and may extend through any length of adapter 220. Similar to centralchannel 213 of isolator 215, central channel 219 may extend less thanhalf of a length through adapter 220, may extend about half of thelength of adapter 220, or may extend more than half of the length ofadapter 220. Central channel 219 may be characterized by a diameter,which may be related to, equal to, or substantially equal to a diameterof channel 213. Additionally, central channel 219 may be characterizedby a diameter of a shape circumscribing apertures 214 of isolator 215and in embodiments exactly circumscribing apertures 214, such as bybeing characterized by a radius substantially similar to or equivalentto a radius defined from a central axis through isolator 215 andextending to an outer edge of a diameter of each aperture 214. Forexample, central channel 219 may be characterized by a circular orovular shape characterized by one or more diameters that may extendtangentially with an outer portion of each aperture 214.

Adapter 220 may define a base of central channel 219 within the adapter220, which may define a transition from central channel 219 to aplurality of apertures 225 that may at least partially extend throughadapter 220. The transition may occur at a midpoint through the adapter,which may be at any position along a length of the adapter. For example,apertures 225 may extend from a base of central channel 219 towardssecond end 218 of adapter 220, and may extend fully through second end218. In other embodiments, apertures 225 may extend through amid-portion of adapter 220 from a first end accessing central channel219 to a second end accessing a second central channel 221, which mayextend through second end 218 of adapter 220. Central channel 221 may becharacterized by a diameter similar to central channel 219, and in otherembodiments a diameter of central channel 221 may be greater than orless than a diameter of central channel 219. Apertures 225 may becharacterized by a diameter less than or about 50% of a diameter ofcentral channel 219, and may be characterized by a diameter less than orabout 40%, less than or about 30%, less than or about 20%, less than orabout 10%, less than or about 5%, or less of the diameter of centralchannel 219.

Adapter 220 may define a port 222 through an exterior of adapter 220,such as along a sidewall or side portion of adapter 220. Port 222 mayprovide access for delivering a first mixing precursor to be mixed witha precursor provided from remote plasma unit 210. Port 222 may providefluid access to a mixing channel 223 that may at least partially extendthrough adapter 220 towards a central axis of adapter 220. Mixingchannel 223 may extend at any angle into adapter 220, and in someembodiments a first portion 224 of mixing channel 223 may extend normalto a central axis through adapter 220 in a direction of flow, althoughfirst portion 224 may proceed at an angle of inclination or declinationtowards a central axis through adapter 220. First portion 224 may crosspast apertures 225, which may be distributed about a central axis ofadapter 220 similar to apertures 214 of isolator 215 described above. Bythis distribution, first portion 224 may extend past apertures 225towards a central axis of adapter 220 without intersecting or crossingthrough apertures 225.

First portion 224 of mixing channel 223 may transition to a secondportion 226 of mixing channel 223, which may travel vertically throughadapter 220. In some embodiments, second portion 226 may extend alongand be axially aligned with a central axis through adapter 220. Secondportion 226 may also extend through a middle portion of a circle orother geometric shape extending through a central axis of each aperture225. Second portion 226 may extend to and fluidly couple with secondcentral channel 221 along with apertures 225. Accordingly, a precursordelivered through port 222 may be mixed with a precursor deliveredthrough remote plasma unit 210 within a lower portion of adapter 220 insome embodiments. This may constitute a first stage of mixing within thecomponents between the remote plasma unit 210 and the processing chamber205.

Additionally illustrated in FIG. 2 is an alternative embodiment in whichsecond portion 226 of mixing channel 223 extends vertically in theopposite direction. For example, as described above second portion 226 amay extend vertically towards second central channel 221 to mix withinthis region. Alternatively, second portion 226 b may extend verticallytowards first central channel 219. Although illustrated in hidden view,second portion 226 b is illustrated as a separate embodiment, and it isto be understood that adapters according to the present technology mayinclude any version of second portion 226 extending towards first end217 or second end 218 of adapter 220. When delivered in a directiontowards first central channel 219, mixing of the second precursordelivered through port 222 may occur within a first portion of adapter220, and may provide improved uniformity by causing the precursordelivered through port 222 to flow through the plurality of apertures225 along with the precursor delivered from remote plasma unit 210. Whendelivered towards second central channel 221, it is possible that lesscomplete mixing may occur due to the flow of precursors, which mayincrease a central concentration of the precursors delivered throughcentral channel 221. When delivered towards first central channel 219,the precursor through port 222 may distribute radially within the firstcentral channel and proceed more uniformly through apertures 225 as itis forced by the downward flow from the remote plasma unit 210 and/orpressure through the chamber.

Adapter 220 may be made of a similar or different material from isolator215. In some embodiments, while isolator may include a ceramic orinsulative material, adapter 220 may be made of or include aluminum,including oxides of aluminum, treated aluminum on one or more surfaces,or some other material. For example, interior surfaces of adapter 220may be coated with one or more materials to protect adapter 220 fromdamage that may be caused by plasma effluents from remote plasma unit210. Interior surfaces of adapter 220 may be anodized with a range ofmaterials that may be inert to plasma effluents of fluorine, and whichmay include yttrium oxide or barium titanate, for example. Adapter 220may also define trenches 227 and 228, which may be annular trenches, andmay be configured to seat o-rings or other sealing elements.

Coupled with adapter 220 may be a spacer 230. Spacer 230 may be orinclude ceramic, and may be a similar material as either isolator 215 oradapter 220 in embodiments. Spacer 230 may define a central aperture 232through spacer 230. Central aperture 232 may be characterized by atapered shape through spacer 230 from a portion proximate second centralchannel 221 of adapter 220 to the opposite side of spacer 230. A portionof central aperture 232 proximate second central channel 221 may becharacterized by a diameter equal to or similar to a diameter of secondcentral channel 221. Central aperture 232 may be characterized by apercentage of taper of greater than or about 10% along a length ofspacer 230, and may be characterized by a percentage of taper greaterthan or about 20%, greater than or about 30%, greater than or about 40%,greater than or about 50%, greater than or about 60%, greater than orabout 70%, greater than or about 80%, greater than or about 90%, greaterthan or about 100%, greater than or about 150%, greater than or about200%, greater than or about 300%, or greater in embodiments.

Mixing manifold 235 may be coupled with spacer 230 at a first end 236 orfirst surface, and may be coupled with chamber 205 at a second end 237opposite first end 236. Mixing manifold 235 may define a central channel238, which may extend from first end 236 to second end 237 and may beconfigured to deliver precursors into processing chamber 205. Mixingmanifold 235 may also be configured to incorporate an additionalprecursor with the mixed precursors delivered from adapter 220. Mixingmanifold may provide a second stage of mixing within the system. Mixingmanifold 235 may define a port 239 along an exterior of mixing manifold235, such as along a side or sidewall of mixing manifold 235. Mixingmanifold 235 may define multiple ports 239 on opposite sides of mixingmanifold 235 in some embodiments to provide additional access fordelivery of precursors to the system. Mixing manifold 235 may alsodefine one or more trenches within first surface 236 of mixing manifold235. For example, mixing manifold 235 may define a first trench 240, anda second trench 241, which may provide fluid access from port 239 tocentral channel 238. For example, port 239 may provide access to achannel 243 that may provide fluid access to one or both trenches, suchas from below a trench as illustrated. The trenches 240, 241 will bedescribed in further detail below.

Central channel 238 may be characterized by a first portion 242extending from first end 236 to a flared section 246. First portion 242may be characterized by a cylindrical profile, and may be characterizedby a diameter similar to or equal to an outlet of central aperture 232of spacer 230. Flared section 246 may be characterized by a percentageof flare of greater than or about 10%, greater than or about 20%,greater than or about 30%, greater than or about 40%, greater than orabout 50%, greater than or about 60%, greater than or about 70%, greaterthan or about 80%, greater than or about 90%, greater than or about100%, greater than or about 150%, greater than or about 200%, greaterthan or about 300%, or greater in embodiments. Mixing manifold 235 maybe made of a similar or different material than adapter 220 inembodiments. For example, mixing manifold 235 may include nickel, whichmay provide adequate protection against the precursors that may allcontact portions of the mixing manifold. Unlike conventional technology,because the fluorine plasma effluents may already be mixed upstream ofthe mixing manifold, issues related to recombination may not occur. Forexample, without wishing to be bound by any particular theory, nickelmay catalyze the recombination of fluorine radicals into diatomicfluorine, which may contribute to polysilicon loss in conventionaltechnologies. When the fluorine effluents are mixed prior to deliveryinto a nickel, nickel plated, or coated component, this process may belimited as the concentration of fluorine effluents may be reduced,further protecting polysilicon features at the substrate level.

Flared section 246 may provide egress for precursors delivered throughmixing manifold 235 through second end 237 via an outlet 247. Thesections of central channel 238 through mixing manifold 235 may beconfigured to provide adequate or thorough mixing of precursorsdelivered to the mixing manifold, before providing the mixed precursorsinto chamber 205. Unlike conventional technology, by performing theetchant or precursor mixing prior to delivery to a chamber, the presentsystems may provide an etchant having uniform properties prior to beingdistributed about a chamber and substrate. Additionally, by providingmultiple stages of mixing, more uniformity of mixing may be provided foreach of the precursors. In this way, processes performed with thepresent technology may have more uniform results across a substratesurface. The illustrated stack of components may also limit particleaccumulation by reducing the number of elastomeric seals included in thestack, which may degrade over time and produce particles that may affectprocesses being performed.

Chamber 205 may include a number of components in a stacked arrangement.The chamber stack may include a gasbox 250, a blocker plate 260, afaceplate 270, an optional ion suppression element 280, and a lid spacer290. The components may be utilized to distribute a precursor or set ofprecursors through the chamber to provide a uniform delivery of etchantsor other precursors to a substrate for processing. In embodiments, thesecomponents may be stacked plates each at least partially defining anexterior of chamber 205.

Gasbox 250 may define a chamber inlet 252. A central channel 254 may bedefined through gasbox 250 to deliver precursors into chamber 205. Inlet252 may be aligned with outlet 247 of mixing manifold 235. Inlet 252and/or central channel 254 may be characterized by a similar diameter inembodiments. Central channel 254 may extend through gasbox 250 and beconfigured to deliver one or more precursors into a volume 257 definedfrom above by gasbox 250. Gasbox 250 may include a first surface 253,such as a top surface, and a second surface 255 opposite the firstsurface 253, such as a bottom surface of gasbox 250. Top surface 253 maybe a planar or substantially planar surface in embodiments. Coupled withtop surface 253 may be a heater 248.

Heater 248 may be configured to heat chamber 205 in embodiments, and mayconductively heat each lid stack component. Heater 248 may be any kindof heater including a fluid heater, electrical heater, microwave heater,or other device configured to deliver heat conductively to chamber 205.In some embodiments, heater 248 may be or include an electrical heaterformed in an annular pattern about first surface 253 of gasbox 250. Theheater may be defined across the gasbox 250, and around mixing manifold235. The heater may be a plate heater or resistive element heater thatmay be configured to provide up to, about, or greater than about 2,000 Wof heat, and may be configured to provide greater than or about 2,500 W,greater than or about 3,000 W, greater than or about 3,500 W, greaterthan or about 4,000 W, greater than or about 4,500 W, greater than orabout 5,000 W, or more.

Heater 248 may be configured to produce a variable chamber componenttemperature up to, about, or greater than about 50° C., and may beconfigured to produce a chamber component temperature greater than orabout 75° C., greater than or about 100° C., greater than or about 150°C., greater than or about 200° C., greater than or about 250° C.,greater than or about 300° C., or higher in embodiments. Heater 248 maybe configured to raise individual components, such as the ionsuppression element 280, to any of these temperatures to facilitateprocessing operations, such as an anneal. In some processing operations,a substrate may be raised toward the ion suppression element 280 for anannealing operation, and heater 248 may be adjusted to conductivelyraise the temperature of the heater to any particular temperature notedabove, or within any range of temperatures within or between any of thestated temperatures.

Second surface 255 of gasbox 250 may be coupled with blocker plate 260.Blocker plate 260 may be characterized by a diameter equal to or similarto a diameter of gasbox 250. Blocker plate 260 may define a plurality ofapertures 263 through blocker plate 260, only a sample of which areillustrated, which may allow distribution of precursors, such asetchants, from volume 257, and may begin distributing precursors throughchamber 205 for a uniform delivery to a substrate. Although only a fewapertures 263 are illustrated, it is to be understood that blocker plate260 may have any number of apertures 263 defined through the structure.Blocker plate 260 may be characterized by a raised annular section 265at an external diameter of the blocker plate 260, and a lowered annularsection 266 at an external diameter of the blocker plate 260. Raisedannular section 265 may provide structural rigidity for the blockerplate 260, and may define sides or an external diameter of volume 257 inembodiments. Blocker plate 260 may also define a bottom of volume 257from below. Volume 257 may allow distribution of precursors from centralchannel 254 of gasbox 250 before passing through apertures 263 ofblocker plate 260. Lowered annular section 266 may also providestructural rigidity for the blocker plate 260, and may define sides oran external diameter of a second volume 258 in embodiments. Blockerplate 260 may also define a top of volume 258 from above, while a bottomof volume 258 may be defined by faceplate 270 from below.

Faceplate 270 may include a first surface 272 and a second surface 274opposite the first surface 272. Faceplate 270 may be coupled withblocker plate 260 at first surface 272, which may engage lowered annularsection 266 of blocker plate 260. Faceplate 270 may define a ledge 273at an interior of second surface 274, extending to third volume 275 atleast partially defined within or by faceplate 270. For example,faceplate 270 may define sides or an external diameter of third volume275 as well as a top of volume 275 from above, while ion suppressionelement 280 may define third volume 275 from below. Faceplate 270 maydefine a plurality of channels through the faceplate, although notillustrated in FIG. 2.

Ion suppression element 280 may be positioned proximate the secondsurface 274 of faceplate 270, and may be coupled with faceplate 270 atsecond surface 274. Ion suppression element 280 may be configured toreduce ionic migration into a processing region of chamber 205 housing asubstrate. Ion suppression element 280 may define a plurality ofapertures through the structure, although not illustrated in FIG. 2. Inembodiments, gasbox 250, blocker plate 260, faceplate 270, and ionsuppression element 280 may be coupled together, and in embodiments maybe directly coupled together. By directly coupling the components, heatgenerated by heater 248 may be conducted through the components tomaintain a particular chamber temperature that may be maintained withless variation between components. Ion suppression element 280 may alsocontact lid spacer 290, which together may at least partially define aplasma processing region in which a substrate is maintained duringprocessing.

FIG. 3 shows a schematic partial bottom plan view of an isolator 215according to some embodiments of the present technology. As discussedpreviously, isolator 215 may define a plurality of apertures 214extending from central channel 213 to second end 212 of isolator 215.Apertures 214 may be distributed about a central axis through isolator215, and may be distributed equidistantly from a central axis throughisolator 215. Isolator 215 may define any number of apertures 214, whichmay increase movement, distribution, and/or turbulence of a precursorflowing through isolator 215.

FIG. 4 shows a schematic partial top plan view of an adapter 220according to embodiments of the present technology. As previouslydescribed a first central channel 219 may extend from a first end 217 ofadapter 220, and may extend partially through the adapter. The adaptermay define a floor of the central channel, which may have a cylindricalprofile, and may transition to a plurality of apertures 225 that extendthrough the adapter towards the second end as discussed above. Similarto apertures 214, apertures 225 may be distributed about a central axisthrough adapter 220, and may be positioned equidistantly about thecentral axis. Adapter 220 may define any number of apertures through theadapter, and in some embodiments may define more apertures than inisolator 215. The additional apertures may increase mixing with theadded precursor. As previously noted, the mixing channel may deliver theadditional precursor towards the first end of the adapter, and intofirst central channel 219. In this embodiment, the views of FIGS. 4 and5 will be reversed.

FIG. 5 shows a schematic cross-sectional view of an adapter 220 throughline A-A of FIG. 2 according to some embodiments of the presenttechnology. FIG. 5 may illustrate a view through second central channel221, which may show an outlet to the mixing channel through secondportion 226 previously described. As illustrated, second portion 226 mayextend between the apertures 225, and may extend along a central axis ofadapter 220 towards the second end of the adapter. Additionally, asnoted above, in embodiments where second portion 226 extends towardsfirst central channel 219, the views of FIG. 4 and FIG. 5 would bereversed, and the mixed precursors from the remote plasma unit and theprecursor introduced through the port in the adapter 220 would exit fromapertures 225 pre-mixed.

FIG. 6 shows a schematic perspective view of mixing manifold 235according to some embodiments of the present technology. As previouslynoted, mixing manifold 235 may define a central channel 238 through themixing manifold, which may transport the mixed precursors from theadapter to the processing chamber. Mixing manifold 235 may also includea number of features allowing the introduction of an additionalprecursor that may be mixed with the previously mixed precursors. Aspreviously described, one or more ports 239 may provide access for theintroduction of a precursor into mixing manifold 235. Port 239 mayaccess a channel as illustrated in FIG. 2, which may extend to one ofmore of the trenches defined in first surface 236 of mixing manifold235.

Trenches may be defined in first surface 236 of mixing manifold 235,which may form channels that are at least partially isolated when mixingmanifold is coupled with spacer 230 discussed previously. A first trench240 may be formed about central channel 238. First trench 240 may beannular in shape, and may be characterized by an inner radius from acentral axis through mixing manifold 235, and an outer radius. The innerradius may be defined by a first inner sidewall 605, which may define atop portion of the central channel 238 extending through the mixingmanifold 235. The outer radius of first trench 240 may be defined by afirst outer sidewall 610, which may be located radially outward from thefirst inner sidewall 605. The first trench 240 may provide fluid accessto the central channel 238 through the first inner sidewall 605. Forexample, first inner sidewall 605 may define a number of apertures 606through first inner sidewall 605. The apertures 606 may be distributedabout first inner sidewall 605 to provide multiple access positions forthe additional precursor to be delivered into the central channel 238.

First inner sidewall 605 may be characterized by a beveled or chamferedsurface from the first surface 236 towards the first trench 240. Inembodiments, a chamfered profile may be formed, which may maintain atleast a portion of first inner sidewall 605 along first surface 236available for coupling with spacer 230 discussed previously. The chamfermay also provide further lateral spacing to prevent leakage across thefirst surface between the first trench 240 and the central channel 238.Apertures 606 may be defined through the chamfered portion, and may bedefined at an angle, such as at a right angle to a plane of thechamfered portion, or at some other angle through the first innersidewall 605.

Mixing manifold 235 may define a second trench 241 that is formedradially outward from first trench 240. Second trench 241 may also beannular in shape, and central channel 238, first trench 240, and secondtrench 241 may be concentrically aligned about a central axis throughthe mixing manifold 235 in some embodiments. Second trench 241 may befluidly coupled with the port 239 via channel 243 previously described.Channel 243 may extend to one or more positions within second trench 241and may access second trench 241 from a base of the trench, although inother embodiments channel 243 may access trench 241 through a sidewallof the trench. By accessing from below the second trench 241, a depth ofsecond trench 241 may be minimized, which may decrease the volume of theformed channel, and which may limit the diffusion of the precursordelivered to increase the uniformity of delivery.

Second trench 241 may be defined between first outer sidewall 610, whichmay alternatively be a second inner sidewall, and an outer radiusdefined by the body of the mixing manifold 235. In embodiments, firstouter sidewall 610 may define each of the first trench 240 and thesecond trench 241 along the first surface 236 of the mixing manifold235. First outer sidewall 610 may also be characterized by a beveled orchamfered profile along the first surface 236 on a side of the firstouter sidewall proximate the second trench 241, similar to the profileof first inner sidewall 605. First outer sidewall 610 may also define aplurality of apertures 608 defined through the wall to provide fluidaccess between the second trench 241 and the first trench 240. Theapertures 608 may be defined anywhere along or through first outersidewall 610, and may be defined through the chamfered portion similarto the apertures through first inner sidewall 605. Accordingly, aprecursor delivered through port 239 may flow into second trench 241,may pass through apertures 608 into first trench 240, and may passthrough apertures 606 into central channel 238, where the precursor maybe mixed with precursors delivered through adapter 220.

Apertures 608 may include any number of apertures defined through thefirst outer sidewall 610, and apertures 606 may include any number ofapertures defined through the first inner sidewall 605. In someembodiments, the number of apertures through each wall may not be equal.For example, in some embodiments the number of apertures 606 throughfirst inner sidewall 605 may be greater than the number of apertures 608through the first outer sidewall, and in some embodiments, the number ofapertures 606 may be double or more than the number of apertures 608.Additionally, apertures 608 may be radially offset from apertures 606,such that no aperture 608 is in line with any aperture 606 through aradius extending from a central axis of the mixing manifold 235. Thisaperture and channel design may provide for a recursive flow through themixing manifold improving delivery of the additional precursor into thecentral channel 238, and may provide a more uniform delivery througheach aperture 606. Mixing manifold 235 may also define an additionaltrench 615, which may be radially outward of second trench 241, and maybe configured to receive an elastomeric element or o-ring.

FIG. 7 shows a schematic cross-sectional view of mixing manifold 235through line B-B of FIG. 6 according to some embodiments of the presenttechnology. The cross-section illustrates the apertures 608 as they aredefined through first outer sidewall 610 to provide fluid access fromsecond trench 241 to first trench 240. Additionally, FIG. 7 illustratessome embodiments in which apertures 608 are spaced a full diameteracross from each other through the first outer sidewall. The apertures608 are also spaced roughly so port 239 is spaced equidistantly betweenthe two apertures 608. Channel 243 previously described may enter secondtrench 241 at a similar location to be an equal or substantially equaldistance from each aperture 608.

FIG. 8 shows a schematic cross-sectional view of mixing manifold 235through line C-C of FIG. 6 according to some embodiments of the presenttechnology. The cross-section illustrates the apertures 606 as they aredefined through first inner sidewall 605 to provide fluid access fromfirst trench 240 to central channel 238. Apertures 606 as well asapertures 608 may extend through a chamfered portion of the first innersidewall and first outer sidewall, respectively, and may extend at anangle normal to the angle of the chamfer, or at some other decliningangle. By including a declining angle through the features, such as thefirst outer sidewall 610, the delivery may provide a flow that furtherdistributes the precursor before the precursor rises to flow through thenext set of apertures. This may also limit machining effects of formingthe apertures, or otherwise damaging the first surface 236. Mixingmanifold 235 may provide a design affording more uniform mixing of aprecursor with one or more precursors extending through the centralchannel 238.

FIG. 9 shows operations of a method 900 of delivering precursors througha processing chamber according to some embodiments of the presenttechnology. Method 900 may be performed in system 200, and may allowimproved precursor mixing externally to the chamber, while protectingcomponents from etchant damage. While components of a chamber may beexposed to etchants that may cause wear over time, the presenttechnology may limit these components to those that may be more easilyreplaced and serviced. For example, the present technology may limitexposure of internal components of a remote plasma unit, which may allowparticular protection to be applied to the remote plasma unit.

Method 900 may include forming a remote plasma of a fluorine-containingprecursor in operation 905. The precursor may be delivered to a remoteplasma unit to be dissociated to produce plasma effluents. Inembodiments, the remote plasma unit may be coated or lined with an oxideor other material that may withstand contact with thefluorine-containing effluents. In embodiments, aside from carrier gases,no other etchant precursors may be delivered through the remote plasmaunit, which may protect the unit from damage, and allow tuning of theplasma power to provide specific dissociation of the precursor as may bebeneficial to particular processes being performed. Other embodimentsconfigured to produce plasma effluents of a different etchant may belined with a different material that may be inert to that precursor or acombination of precursors.

At operation 910, plasma effluents of the fluorine-containing precursormay be flowed into an adapter coupled with the remote plasma unit. Atoperation 915, a hydrogen-containing precursor may be flowed into theadapter. The adapter may be configured to provide mixing of thefluorine-containing precursor and the hydrogen-containing precursorwithin the adapter, to produce a first mixture at operation 920. Atoperation 925, the first mixture may be flowed from the adapter into amixing manifold. At operation 930, a third precursor may be flowed intothe mixing manifold. The third precursor may include an additionalhydrogen-containing precursor, an additional halogen-containingprecursor, or other combinations of precursors. The mixing manifold maybe configured to perform a second stage of mixing of the third precursorwith the first mixture, which may produce a second mixture 935.

Subsequently, the second mixture including all three precursors may bedelivered from the mixing manifold into a semiconductor processingchamber. Additional components described elsewhere may be used tocontrol delivery and distribution of the etchants as previouslydiscussed. It is to be understood that the precursors identified areonly examples of suitable precursors for use in the described chambers.The chambers and materials discussed throughout the disclosure may beused in any number of other processing operations that may benefit fromseparating precursors and mixing them prior to delivery into aprocessing chamber.

In the preceding description, for the purposes of explanation, numerousdetails have been set forth in order to provide an understanding ofvarious embodiments of the present technology. It will be apparent toone skilled in the art, however, that certain embodiments may bepracticed without some of these details, or with additional details.

Having disclosed several embodiments, it will be recognized by those ofskill in the art that various modifications, alternative constructions,and equivalents may be used without departing from the spirit of theembodiments. Additionally, a number of well-known processes and elementshave not been described in order to avoid unnecessarily obscuring thepresent technology. Accordingly, the above description should not betaken as limiting the scope of the technology.

Where a range of values is provided, it is understood that eachintervening value, to the smallest fraction of the unit of the lowerlimit, unless the context clearly dictates otherwise, between the upperand lower limits of that range is also specifically disclosed. Anynarrower range between any stated values or unstated intervening valuesin a stated range and any other stated or intervening value in thatstated range is encompassed. The upper and lower limits of those smallerranges may independently be included or excluded in the range, and eachrange where either, neither, or both limits are included in the smallerranges is also encompassed within the technology, subject to anyspecifically excluded limit in the stated range. Where the stated rangeincludes one or both of the limits, ranges excluding either or both ofthose included limits are also included.

As used herein and in the appended claims, the singular forms “a”, “an”,and “the” include plural references unless the context clearly dictatesotherwise. Thus, for example, reference to “a layer” includes aplurality of such layers, and reference to “the precursor” includesreference to one or more precursors and equivalents thereof known tothose skilled in the art, and so forth.

Also, the words “comprise(s)”, “comprising”, “contain(s)”, “containing”,“include(s)”, and “including”, when used in this specification and inthe following claims, are intended to specify the presence of statedfeatures, integers, components, or operations, but they do not precludethe presence or addition of one or more other features, integers,components, operations, acts, or groups.

The invention claimed is:
 1. A semiconductor processing system componentcomprising: a mixing manifold characterized by a first end and a secondend opposite the first end, wherein the mixing manifold defines acentral channel through the mixing manifold, wherein the mixing manifolddefines a port along an exterior of the mixing manifold, wherein theport is fluidly coupled with a first trench defined within the first endof the mixing manifold, wherein the first trench is characterized by aninner radius at a first inner sidewall and an outer radius, wherein thefirst inner sidewall defines a plurality of apertures defined throughthe first inner sidewall and providing fluid access to the centralchannel, wherein the first inner sidewall comprises a chamfered edgefrom the first end of the mixing manifold, and wherein the plurality ofapertures are defined through the chamfered edge of the first innersidewall.
 2. The semiconductor processing system component of claim 1,wherein the mixing manifold further comprises a second trench definedwithin the first end of the mixing manifold, wherein the second trenchis located radially outward from the first trench, and wherein the portis fluidly coupled with the second trench.
 3. The semiconductorprocessing system component of claim 2, wherein the second trench ischaracterized by an inner radius at a second inner sidewall, and whereinthe second inner sidewall further defines the outer radius of the firsttrench.
 4. The semiconductor processing system component of claim 3,wherein the second inner sidewall defines a plurality of aperturesdefined through the second inner sidewall and providing fluid access tothe first trench.
 5. The semiconductor processing system component ofclaim 4, wherein the second inner sidewall defines two apertures throughthe second inner sidewall.
 6. The semiconductor processing systemcomponent of claim 5, wherein the first inner sidewall defines aplurality of apertures defined through the first inner sidewall, andwherein each aperture of the plurality of apertures defined through thesecond inner sidewall are radially offset from each aperture of theplurality of apertures defined through the first inner sidewall.
 7. Thesemiconductor processing system component of claim 5, wherein the twoapertures are defined through the second inner sidewall at opposite endsof a diameter through the second inner sidewall.
 8. The semiconductorprocessing system component of claim 7, wherein the port is definedequidistantly between the two apertures defined through the second innersidewall.
 9. The semiconductor processing system component of claim 1,wherein at least three apertures are defined through the first innersidewall, and wherein the apertures are distributed equidistantly aboutthe first inner sidewall.
 10. The semiconductor processing systemcomponent of claim 1, wherein the plurality of apertures are defined atan angle through the first inner sidewall extending in a direction fromthe first end of the mixing manifold to the central channel.
 11. Thesemiconductor processing system component of claim 1, wherein the mixingmanifold comprises nickel.
 12. The semiconductor processing systemcomponent of claim 11, wherein the nickel is nickel plating.
 13. Asemiconductor processing system component comprising: a mixing manifoldcharacterized by a first end and a second end opposite the first end,wherein the mixing manifold defines a central channel through the mixingmanifold, wherein the mixing manifold defines a port along an exteriorof the mixing manifold, wherein the port is fluidly coupled with a firsttrench defined within the first end of the mixing manifold, wherein thefirst trench is characterized by an inner radius at a first innersidewall and an outer radius, wherein the first trench provides fluidaccess to the central channel through the first inner sidewall, andwherein the mixing manifold further comprises a second trench definedwithin the first end of the mixing manifold, wherein the second trenchis located radially outward from the first trench, wherein the port isfluidly coupled with the second trench, wherein the second trench ischaracterized by an inner radius at a second inner sidewall, wherein thesecond inner sidewall further defines the outer radius of the firsttrench, and wherein the second inner sidewall defines a plurality ofapertures defined through the second inner sidewall and providing fluidaccess to the first trench.
 14. The semiconductor processing systemcomponent of claim 13, wherein the second inner sidewall defines twoapertures through the second inner sidewall, and wherein the first innersidewall defines a plurality of apertures defined through the firstinner sidewall, and wherein each aperture of the plurality of aperturesdefined through the second inner sidewall are radially offset from eachaperture of the plurality of apertures defined through the first innersidewall.
 15. A semiconductor processing system component comprising: amixing manifold characterized by a first end and a second end oppositethe first end, wherein the mixing manifold defines a central channelthrough the mixing manifold, wherein the mixing manifold defines a portalong an exterior of the mixing manifold, wherein the port is fluidlycoupled with a first trench defined within the first end of the mixingmanifold, wherein the first trench is characterized by an inner radiusat a first inner sidewall and an outer radius, wherein the first trenchprovides fluid access to the central channel through the first innersidewall, wherein the first inner sidewall comprises a chamfered edgefrom the first end of the mixing manifold, wherein the first innersidewall defines a plurality of apertures defined through the chamferededge of the first inner sidewall and providing fluid access to thecentral channel, wherein at least three apertures are defined throughthe first inner sidewall, and wherein the apertures are distributedequidistantly about the first inner sidewall.